Reliability assessment in SiC and GaN power MOSFETs based emerging Wide Bandgap semiconductors technology from a systematic literature review
DOI:
https://doi.org/10.23857/dc.v8i1.2627Palabras clave:
SiC, GaN, WBG Semiconductors, BTI, Power electronic, 4H-SiC MOSFET, HEMT.Resumen
Silicon power devices have improved over the last decades, but they are approaching their per-formance limits imposed by material properties. However, emerging materials such as SiC and GaN are excelling in such applications and have attracted great interest in academia and industry due to their superior properties, for the development of wide bandgap (WBG) devices, in particu-lar power MOSFETs, which will be key components for the next generation of high-voltage, low-loss power electronics. Devices with impressive new specifications are already available, but they must prove their reliability to be incorporated into systems. Many instability problems must be resolved, and their causes analyzed using electrical characterization tests such as PBTI and NBTI. Once devices are found to be unreliable, tests can be performed to understand the reasons based on the criteria and interpretations of the characterization methods. This paper brings togeth-er and discusses some problems that can happen in GaN and SiC, and the various instability studies that are key to being able to prevent failures while determining the acceptable range of operating conditions for a particular device. Finally, technological challenges, applications and research opportunities are discussed; knowing that future applications such as automotive, renew-able energy, and space will be more critical and with higher reliability requirements, so better and new reliability testing methods will be needed in their components.
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